Detalhe da pesquisa
1.
Anisotropic sensing based on single ReS2flake for VOCs discrimination.
Nanotechnology;
35(30)2024 May 09.
Artigo
em Inglês
| MEDLINE
| ID: mdl-38651768
2.
Dielectric engineering enable to lateral anti-ambipolar MoTe2heterojunction.
Nanotechnology;
33(17)2022 Feb 01.
Artigo
em Inglês
| MEDLINE
| ID: mdl-35008081
3.
UV light modulated synaptic behavior of MoTe2/BN heterostructure.
Nanotechnology;
32(47)2021 Sep 02.
Artigo
em Inglês
| MEDLINE
| ID: mdl-33906183
4.
Tunable and nonvolatile multibit data storage memory based on MoTe2/boron nitride/graphene heterostructures through contact engineering.
Nanotechnology;
31(48): 485205, 2020 Nov 27.
Artigo
em Inglês
| MEDLINE
| ID: mdl-32707568
5.
Highly-sensitive gas sensor based on two-dimensional material field effect transistor.
Nanotechnology;
29(43): 435502, 2018 Oct 26.
Artigo
em Inglês
| MEDLINE
| ID: mdl-30091717
6.
Volatile organic compounds discrimination based on dual mode detection.
Nanotechnology;
29(24): 245502, 2018 Jun 15.
Artigo
em Inglês
| MEDLINE
| ID: mdl-29485410
7.
The effect of air stable n-doping through mild plasma on the mechanical property of WSe2 layers.
Nanotechnology;
29(17): 175703, 2018 Apr 27.
Artigo
em Inglês
| MEDLINE
| ID: mdl-29446348
8.
Dual Interactive Mode Human-Machine Interfaces Based on Triboelectric Nanogenerator and IGZO/In2O3 Heterojunction Synaptic Transistor.
Small Methods;
: e2301698, 2024 Apr 12.
Artigo
em Inglês
| MEDLINE
| ID: mdl-38607954
9.
Flexible In-Ga-Zn-N-O synaptic transistors for ultralow-power neuromorphic computing and EEG-based brain-computer interfaces.
Mater Horiz;
10(10): 4317-4328, 2023 10 02.
Artigo
em Inglês
| MEDLINE
| ID: mdl-37431592
10.
Engineering of Oxidized Line Defects on CVD-Grown MoS2 Flakes.
ACS Appl Mater Interfaces;
14(41): 47288-47299, 2022 Oct 19.
Artigo
em Inglês
| MEDLINE
| ID: mdl-36205718
11.
Modulation of MoTe2/MoS2 van der Waals heterojunctions for multifunctional devices using N2O plasma with an opposite doping effect.
Nanoscale;
13(16): 7851-7860, 2021 Apr 30.
Artigo
em Inglês
| MEDLINE
| ID: mdl-33881030
12.
Multi-level flash memory device based on stacked anisotropic ReS2-boron nitride-graphene heterostructures.
Nanoscale;
12(36): 18800-18806, 2020 Sep 28.
Artigo
em Inglês
| MEDLINE
| ID: mdl-32970061
13.
Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe2/MoS2 Heterotransistors.
ACS Nano;
13(5): 5430-5438, 2019 May 28.
Artigo
em Inglês
| MEDLINE
| ID: mdl-30974935
14.
Gate-Tunable Photodetection/Voltaic Device Based on BP/MoTe2 Heterostructure.
ACS Appl Mater Interfaces;
11(15): 14215-14221, 2019 Apr 17.
Artigo
em Inglês
| MEDLINE
| ID: mdl-30905149
15.
Dynamically controllable polarity modulation of MoTe2 field-effect transistors through ultraviolet light and electrostatic activation.
Sci Adv;
5(5): eaav3430, 2019 May.
Artigo
em Inglês
| MEDLINE
| ID: mdl-31058220
16.
Ultrasensitive and Fully Reversible NO2 Gas Sensing Based on p-Type MoTe2 under Ultraviolet Illumination.
ACS Sens;
3(9): 1719-1726, 2018 09 28.
Artigo
em Inglês
| MEDLINE
| ID: mdl-30105902
17.
Specific and Highly Sensitive Detection of Ketone Compounds Based on p-Type MoTe2 under Ultraviolet Illumination.
ACS Appl Mater Interfaces;
10(41): 35664-35669, 2018 Oct 17.
Artigo
em Inglês
| MEDLINE
| ID: mdl-30246520
18.
Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment.
Nanoscale;
10(26): 12436-12444, 2018 Jul 09.
Artigo
em Inglês
| MEDLINE
| ID: mdl-29926870
19.
Acoustically enhanced photodetection by a black phosphorus-MoS2 van der Waals heterojunction p-n diode.
Nanoscale;
10(21): 10148-10153, 2018 May 31.
Artigo
em Inglês
| MEDLINE
| ID: mdl-29785445
20.
Contact Engineering of Molybdenum Ditelluride Field Effect Transistors through Rapid Thermal Annealing.
ACS Appl Mater Interfaces;
9(35): 30107-30114, 2017 Sep 06.
Artigo
em Inglês
| MEDLINE
| ID: mdl-28816041